Photoluminescence and photoconductivity in CdTe crystals doped with Bi (Articolo in rivista)

Type
Label
  • Photoluminescence and photoconductivity in CdTe crystals doped with Bi (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2382668 (literal)
Alternative label
  • Saucedo E.(a), Ruiz C. M., Bermùdez V.(a), Dieguez E.(a), Gombia E.(b), Zappettini A.(b), Baraldi A.(c), Sochinskii N. V.(d) (2006)
    Photoluminescence and photoconductivity in CdTe crystals doped with Bi
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Saucedo E.(a), Ruiz C. M., Bermùdez V.(a), Dieguez E.(a), Gombia E.(b), Zappettini A.(b), Baraldi A.(c), Sochinskii N. V.(d) (literal)
Pagina inizio
  • 104901-1 (literal)
Pagina fine
  • 104901-6 (literal)
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  • http://jap.aip.org/resource/1/japiau/v100/i10/p104901_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 100 (literal)
Rivista
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  • 6 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (a)Departamento de Física de Materiales, Universidad Autónoma de Madrid, Madrid 28049, Spain (b)IMEM-CNR, Parco Area delle Scienze 37/A, Parma 43010, Italy (c)Dipartimento di Fisica, Università di Parma, Vialle delle G.P. Usberti 7A, Parma 43100, Italy (d)Instituto de Microelectrónica de Madrid, CNM-CSIC, Polo Tecnológico de Madrid, Tres Cantos, Madrid 28760, Spain (literal)
Titolo
  • Photoluminescence and photoconductivity in CdTe crystals doped with Bi (literal)
Abstract
  • Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at Ev+0.71 eV, only present at low dopant concentrations, has donor character and hole-trap properties, and is mainly responsible for the high resistivity and very high photoconductivity of the samples. The second one, an acceptor center located at Ev+0.30 eV, assigned to BiTe species, is only present at high dopant concentrations and is mainly responsible for the low resistivity and poor photoconductivity of these samples. (literal)
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