http://www.cnr.it/ontology/cnr/individuo/prodotto/ID32541
On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs (Articolo in rivista)
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- On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.nima.2004.05.102 (literal)
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Zatko B. a; Dubecky F. a; Bohacek P. a; Gombia E. b; Frigeri P. b; Mosca R. b; Franchi S. b; Huran J. a; Necas V. c; Sekacova M. a; Forster A. d; Kordos P. d (2004)
On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT; Elsevier BV, Amsterdam (Paesi Bassi)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Zatko B. a; Dubecky F. a; Bohacek P. a; Gombia E. b; Frigeri P. b; Mosca R. b; Franchi S. b; Huran J. a; Necas V. c; Sekacova M. a; Forster A. d; Kordos P. d (literal)
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- a Institute of Electrical Engineering, Slovak Academy of Sciences, SK-841 04 Bratislava, Slovakia;
b IMEM CNR, 43010 Parma, Italy;
c Slovak University of Technology, SK-812 19 Bratislava, Slovakia;
d Institute of Thin Films and Interfaces, D-524 25 Julich, Germany (literal)
- Titolo
- On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs (literal)
- Abstract
- In this work, basic tasks related to the spectrometric performance of X- and gamma-ray radiation-imaging detectors based on semi-insulating (SI) GaAs are studied. The state of the art in this field is reported. The importance of a low-noise front-end read-out electronic chain is demonstrated. Four different charge-sensitive preamplifiers are tested and compared. The investigation of SI GaAs detectors considered for imaging applications is focused on the study of different electrode technologies. A blocking electrode is obtained by a surface Schottky barrier or an MBE-grown P+ layer. An ohmic N+ contact is fabricated using alloyed AuGeNi metallization or an advanced, quasi-ohmic non-injecting system created by a non-stoichiometric buffer grown by low-temperature MBE at the metal-semiconductor interface. This latter approach is considered as an improvement of the \"non-alloyed\" ohmic contact. The pulse height spectra obtained with Am-241 and Co-51 sources and corresponding detector energy resolution are evaluated. The role of detector geometry and temperature on the spectrometric performance is studied. (literal)
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