In-depth analysis of the interfaces in InGaAs/InGaP heterosystem (Articolo in rivista)

Type
Label
  • In-depth analysis of the interfaces in InGaAs/InGaP heterosystem (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1051/epjap:2004143 (literal)
Alternative label
  • Pelosi C., Attolini G., Frigeri C., Bersani M., Giubertoni D., Vanzetti L., Kudela R. (2004)
    In-depth analysis of the interfaces in InGaAs/InGaP heterosystem
    in EPJ. Applied physics (Print); EDP Sciences, Les Ulis Cedex (Francia)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Pelosi C., Attolini G., Frigeri C., Bersani M., Giubertoni D., Vanzetti L., Kudela R. (literal)
Pagina inizio
  • 379 (literal)
Pagina fine
  • 383 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Conference: 10th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10) Location: Batz sur Mer, FRANCE Date: SEP 29-OCT 02, 2003 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8077102 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 27 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1-3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMEM-CNR, Parma, Italy; ITC-IRST, Povo, Trento, Italia; Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia (literal)
Titolo
  • In-depth analysis of the interfaces in InGaAs/InGaP heterosystem (literal)
Abstract
  • Different GaAs-matched epitaxial structures based on InGaP and InGaAlP layers were prepared by LP MOVPE. The suitable p- and n-type sequence of these layers will be used as active elements in high efficiency solar cells. The layers were grown on (001) GaAs substratesoriented 2° off towards (110) using trimethylgallium (TMG),trimethylaluminium (TMA), trimethylindium (TMI), arsine (AsH3) and phosphine (PH3) as main reagents and dimethylzinc (DMZ) and silane (SiH4) as p- and n-type doping reagents, respectively.The layers have been analyzed as regards their compositional homogeneity, interface abruptness and doping concentration by different techniques such as SIMS, TEM and AFM.The combined analysis of SIMS and TEM has been of great usefulness in order to define the abruptness of composition change. Moreover an analysis of autodoping effects is reported as regards the arsenic diffusion in InGaP matrix and the analysis of different samples is reported. (literal)
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