DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructures (Articolo in rivista)

Type
Label
  • DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructures (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • Mosca R., Gombia E., Passaseo A., Tasco V., Peroni M., Romanini P. (2004)
    DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructures
    in Superlattices and microstructures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mosca R., Gombia E., Passaseo A., Tasco V., Peroni M., Romanini P. (literal)
Pagina inizio
  • 425 (literal)
Pagina fine
  • 433 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 36 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMEM-CNR, Parco Area delle Scienze, 37A, 43010 Fontanini - Parma, Italy b NNL-INFM-Unità di Lecce, Dipto. Ingegneria dell'Innovazione, Università di Lecce, Via Arnesano, 73100 Lecce, Italy c AMS S.p.A., Via Tiburtina km 12,400, 00131 Rome, Italy (literal)
Titolo
  • DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructures (literal)
Abstract
  • Passivating the ungated surface of AlGaN/GaN HEMTs with silicon nitride (SiN) is effective in improving the microwave output power performances of these devices. However, very little information is available about surface states in GaN-based HEMTs after SiN passivation. In this work we investigate AlGaN/GaN HEMTs structures having either metal-semiconductor or metal-SiN-semiconductor gate contacts. In short gate devices conductance DLTS measurements point out a hole-like peak that shows an anomalous behaviour and can be ascribed to surface states in the access regions of the device. In insulated gate HEMTs a band of levels is detected and ascribed to surface states, whose energy ranges from 0.14 to 0.43 eV. Capacitance-voltage measurements allow us to point out the existence of a second band of interface states deeper in energy than the former one. This band is responsible for slow transients observed in the characteristics of the insulated gate FAT-HEMT. (literal)
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