Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1801163 (literal)

Alternative label

• Hastas N.(a), Dimitriadis C.A.(a), Dozsa L.(b), Gombia E.(c), Mosca R.(c) (2004)
  Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Hastas N.(a), Dimitriadis C.A.(a), Dozsa L.(b), Gombia E.(c), Mosca R.(c) (literal)

Pagina inizio

• 5735 (literal)

Pagina fine

• 5739 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://jap.aip.org/resource/1/japiau/v96/i10/p5735_s1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 96 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• (a)Department of Physics, University of Thessaloniki, 54124 Thessaloniki, Greece (b)Hungarian Academy of Science, PO Box 49, Budapest 114, H-1525 Hungary (c)Instituto Materiali per Electtronica e Magnetismo, Consiglio Nazionale delle Ricerches, Parco Area delle Scienze, 43010 Parma, Italy (literal)

Titolo

• Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique (literal)

Abstract

• The properties of the traps induced by InAs quantum dots (QDs), embedded in a GaAs layer grown by molecular beam epitaxy, are investigated by the low-frequency noise measurements using the Au/n-GaAs Schottky diode as a test device. The forward current noise spectra are composed of two noise components: a 1/ f-like noise at low frequencies and a generation-recombination (g-r) noise at higher frequencies. The 1/ f noise is ascribed to the mobility fluctuations within the space-charge region. The obtained Hooge parameter saH=6310-5d is larger than the expected value considering the phonon or impurity scattering mechanism, indicating the presence of the defects associated with QDs. The analysis of the g-r noise gives a single trap of density of about 1.631014 cm-3 in the part of the GaAs layer located above the QDs. (literal)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR

• ROBERTO MOSCA (Unità di personale interno)
• ENOS GOMBIA (Persona)

Insieme di parole chiave

• Keywords of "Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ROBERTO MOSCA (Unità di personale interno)
• ENOS GOMBIA (Persona)

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Keywords of "Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique" (Insieme di parole chiave)