Structural and Photoelectrical Properties of Nb-Doped PZT Thin Films Deposited by Pulsed Laser Ablation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Structural and Photoelectrical Properties of Nb-Doped PZT Thin Films Deposited by Pulsed Laser Ablation (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/S0955-2219(03)00403-5 (literal)

Alternative label

• Boerasu I. a, Pereira M. a, Gomes M.J.M. , Watts B. b, Leccabue F. b, Vilarinho P.M. c (2004)
  Structural and Photoelectrical Properties of Nb-Doped PZT Thin Films Deposited by Pulsed Laser Ablation
  in Journal of the European Ceramic Society; Elsevier Science Ltd., Oxford (Regno Unito)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Boerasu I. a, Pereira M. a, Gomes M.J.M. , Watts B. b, Leccabue F. b, Vilarinho P.M. c (literal)

Pagina inizio

• 1633 (literal)

Pagina fine

• 1636 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 24 (literal)

Rivista

• Journal of the European Ceramic Society (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• a Deparment of Physics, CFUM, University of Minho, Braga 4710-057, Portugal; b Instituto MASPEC/CNR, Area delle Scienze 37/A, Parma, Fontanini A I-443010, Italy; c Dept. of Ceramic and Glass Eng., CICECO, University of Aveiro, Aveiro 3810-193, Portugal (literal)

Titolo

• Structural and Photoelectrical Properties of Nb-Doped PZT Thin Films Deposited by Pulsed Laser Ablation (literal)

Abstract

• Sintered targets of Nb5+ doped PZT (65/35) (rhombohedral phase) were used in a pulsed laser deposition process to produce, in a single step, highly oriented ferroelectric thin films onto Pt (111)/TiO2/SiO2/Si substrates for electrical applications. The doping influence of 1% mol Nb on the crystalline phase formation and the resulting ferroelectrical and photoelectrical properties of the deposited films were investigated. The characterization was performed using X-ray diffraction, P-E hysteresis loop and photoelectric measurements. Maintaining the same composition PZTN (65/35/1), a comparison with bulk materials and thin films produced by sol-gel technique is also performed. The presented results give some indications about a possible existence of a \"dead-layer\" in the as-deposited films. (C) 2003 Elsevier Ltd. All rights reserved. (literal)

Editore

• Elsevier Science Ltd. (Editore)

Prodotto di

• Sensori di raggi X (SP.P02.003.002) (Modulo)
• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR

• FABRIZIO LECCABUE (Unità di personale interno)
• BERNARD ENRICO WATTS (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Structural and Photoelectrical Properties of Nb-Doped PZT Thin Films Deposited by Pulsed Laser Ablation" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO LECCABUE (Unità di personale interno)
• BERNARD ENRICO WATTS (Unità di personale interno)

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sensori di raggi X (SP.P02.003.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of the European Ceramic Society (Rivista)

Editore di

• Elsevier Science Ltd. (Editore)

Insieme di parole chiave di

• Keywords of "Structural and Photoelectrical Properties of Nb-Doped PZT Thin Films Deposited by Pulsed Laser Ablation" (Insieme di parole chiave)