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Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures (Articolo in rivista)

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Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures (Articolo in rivista) (literal)

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Pelosi C., Attolini G., Bosi M., Frigeri C., Bersani M., Giubertoni D., Vanzetti L., Musayeva N. (2005)
Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures
in Crystal research and technology (1981); Wiley-VCH Verlag Gmbh, Weinheim (Germania)
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Pelosi C., Attolini G., Bosi M., Frigeri C., Bersani M., Giubertoni D., Vanzetti L., Musayeva N. (literal)

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Conference: 34th Annual Conference of the Italian-Association-of-Crystallography Location: Rome, ITALY Date: SEP 26-29, 2004 Sponsor(s): Italian Assoc Crystallog (literal)

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1 IMEM-CNR Parco Area delle Scienze 37/A, 43010 Fontanini, Parma, Italy; 2 ITC-IRST, Via Sommarive 18, 38050 Povo, Trento, Italy; 3 Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan (literal)

Titolo

Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures (literal)

Abstract

Interfaces between arsenide and phosphide III-V semiconductors have shown to be one of the most difficult issues to be understood and definitively solved. This problem is particularly relevant with Vapour Phase Epitaxy (VPE) and Metallo-Organic Vapour Phase Epitaxy (MOVPE) techniques, since an irreproducibility in preparing abrupt interfaces between arsenide and phosphide has been evidenced. Several researchers have ascribed this problem to the volatility of arsenic and phosphorus species and since then for long time different recipes and growth procedures have been suggested in order to obtain sharp transition between the two different materials. In this work the film/substrate interface is modelled using thermodynamical calculations after the regular solution model proposed by Jordan and Ilegems: PH3 flows over GaAs surface, and as a consequence the substrate is enriched with P, with the formation of a thin layer of GaAsP and mixed As-P gaseous species. Samples of InGaP on GaAs substrate were grown by MOVPE and characterised by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM) in order to support the theoretical findings. (literal)

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