Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb (Articolo in rivista)

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  • Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1574671 (literal)
Alternative label
  • C. Ghezzi1, R. Magnanini1, A. Parisini1, E. Gombia2, and R. Mosca2 (2003)
    Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb
    in Journal of applied physics; American Institute of Physics, Melville [NY] (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C. Ghezzi1, R. Magnanini1, A. Parisini1, E. Gombia2, and R. Mosca2 (literal)
Pagina inizio
  • 9743 (literal)
Pagina fine
  • 9748 (literal)
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  • http://jap.aip.org/resource/1/japiau/v93/i12/p9743_s1?isAuthorized=no (literal)
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  • 93 (literal)
Rivista
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  • 6 (literal)
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  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • 1 Istituto Nazionale per la Fisica della Materia (INFM), Dipartimento di Fisica-Università di Parma, Parco Area delle Scienze 7a, 43010 Fontanini, Parma, Italy 2 Istituto CNR-MASPEC, Parco Area delle Scienze 37a, 43010 Fontanini, Parma, Italy (literal)
Titolo
  • Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb (literal)
Abstract
  • In AlxGa1-xSb, the Te impurity originates a simple donor state (D level), whose occupancy equilibrates rapidly with the conduction band; it coexists with a DX state which is responsible for the persistent photoconductivity effect. The D level is linked to the L conduction band minima and becomes resonant with the conduction band for x<0.20. Under these conditions, occupancy variations in the D level give rise to a nonomonotonic temperature dependence of the n(H) Hall density which is not attributable to mixed conduction effects. The role of the D level was investigated in samples of different alloy compositions (x<0.20) and doping levels (10(16)-10(18) cm(-3)) and analyzed using a simplified model. The analysis confirmed the role of the occupancy variations in the D level in determining the temperature dependence of n(H) and the linkage of the level to the L conduction band edge. (literal)
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