Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/pssa.200306304 (literal)

Alternative label

• Frigeri C., Attolini G., Pelosi C. (2003)
  Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE
  in Physica status solidi. A, Applied research; WILEY-V C H VERLAG GMBH, WEINHEIM (Germania)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Frigeri C., Attolini G., Pelosi C. (literal)

Pagina inizio

• 56 (literal)

Pagina fine

• 60 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• Conference: 6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2002) Location: BUDAPEST, HUNGARY Date: MAY 26-29, 2002 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 195 (literal)

Rivista

• Physica status solidi. A, Applied research (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMEM Institute, Parco Area delle Scienze 37/A, Fontanini, 43010 Parma, Italy (literal)

Titolo

• Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE (literal)

Abstract

• The origin of misfit dislocations in MOVPE grown InGaP/GaAs epilayers in compression has been investigated by means of TEM observations. Several ?011? 60° misfit dislocations were found to be associated with stacking faults which suggests that their nucleation was heterogeneous and occurred through reaction of the Shockley partials bordering the stacking faults probably assisted by the strain energy stored in the layers. The stacking faults might have originated at growth islands. An asymmetric distribution of the misfit dislocations was also observed. It was ascribed to the difference between the ? and ? type of the 60° dislocations, with the ? dislocations propagating easier as they have a higher mobility than the ? ones. (literal)

Editore

• WILEY-V C H VERLAG GMBH (Editore)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sistemi per la conversione di energia (SP.P02.002.001) (Modulo)

Autore CNR

• GIOVANNI ATTOLINI (Unità di personale interno)
• CESARE FRIGERI (Persona)
• CLAUDIO PELOSI (Persona)

Insieme di parole chiave

• Parole chiave di "Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sistemi per la conversione di energia (SP.P02.002.001) (Modulo)

Autore CNR di

• GIOVANNI ATTOLINI (Unità di personale interno)
• CESARE FRIGERI (Persona)
• CLAUDIO PELOSI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physica status solidi. A, Applied research (Rivista)

Editore di

• WILEY-V C H VERLAG GMBH (Editore)

Insieme di parole chiave di

• Parole chiave di "Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE" (Insieme di parole chiave)