Analysis of extended defects in CZ silicon annealed in either oxygen or nitrogen by optical and electron beams methods (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Analysis of extended defects in CZ silicon annealed in either oxygen or nitrogen by optical and electron beams methods (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Alternative label

• Frigeri C., Ma M., Irisawa T., Ogawa T. (2002)
  Analysis of extended defects in CZ silicon annealed in either oxygen or nitrogen by optical and electron beams methods
  in Materials science and engineering. B, Solid-state materials for advanced technology (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Frigeri C., Ma M., Irisawa T., Ogawa T. (literal)

Pagina inizio

• 170 (literal)

Pagina fine

• 173 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 91-92 (literal)

Rivista

• Materials science and engineering. B, Solid-state materials for advanced technology (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• a CNR-MASPEC Institute, Parco Area delle Scienze 37 /A, Fontanini, 43010 Parma, Italy b Computer Center, Gakushuin Uni?ersity, Mejiro, Tokyo 171, Japan c Department of Physics, Gakushuin Uni?ersity, Mejiro, Tokyo 171, Japan (literal)

Titolo

• Analysis of extended defects in CZ silicon annealed in either oxygen or nitrogen by optical and electron beams methods (literal)

Abstract

• The effect of annealing in nitrogen atmosphere on the formation of crystal defects in the OSF-ring of Czochralski silicon has been studied by comparison with samples annealed in oxygen atmosphere by using optical and electron beam based methods. By annealing in nitrogen the formation of extrinsic stacking faults is prevented whereas oxygen precipitates form in nearly the same density as in the oxygen annealed sample. Additionally, loop-like microdefects were generated that were not observed for annealing in oxygen ambient. The results are explained by assuming that extra vacancies are introduced into Si from the nitrogen annealing atmosphere. They are expected to recombine with Si interstitials, thus preventing the growth of the stacking faults, and to create the observed microdefects. (literal)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)

Autore CNR

• CESARE FRIGERI (Persona)

Insieme di parole chiave

• Keywords of "Analysis of extended defects in CZ silicon annealed in either oxygen or nitrogen by optical and electron beams methods" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)

Autore CNR di

• CESARE FRIGERI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science and engineering. B, Solid-state materials for advanced technology (Rivista)

Insieme di parole chiave di

• Keywords of "Analysis of extended defects in CZ silicon annealed in either oxygen or nitrogen by optical and electron beams methods" (Insieme di parole chiave)