Internal gettering in epi silicon prepared under different conditions (Articolo in rivista)

Type
Label
  • Internal gettering in epi silicon prepared under different conditions (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0953-8984/14/48/359 (literal)
Alternative label
  • C Frigeri 1, G Borionetti 2 and P Godio 2 (2002)
    Internal gettering in epi silicon prepared under different conditions
    in Journal of physics. Condensed matter (Print); IOP Publishing Ltd. (Institute of Physics Publishing Ltd), "Bristol ; London" (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C Frigeri 1, G Borionetti 2 and P Godio 2 (literal)
Pagina inizio
  • 13127 (literal)
Pagina fine
  • 13134 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Conference: Conference on Extended Defects in Semiconductors (EDS 2002) Location: BOLOGNA, ITALY Date: JUN 01-06, 2002 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 14 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 48 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 CNR-IMEM Institute, Parco Area delle Scienze 37/A, Fontanini, 43010, Parma, Italy; 2 MEMC Electronic Materials SpA, Viale Gherzi 31, 28100 Novara, Italy (literal)
Titolo
  • Internal gettering in epi silicon prepared under different conditions (literal)
Abstract
  • The efficiency of internal gettering in epi-silicon was studied in samples prepared under different conditions as compared to external gettering and p(+) gettering. The parameters changed were substrate resistivity, oxygen content and presence/absence of poly-Si on the tack-side. The efficiency of internal gettering was assessed by measurement of the electron-beam-induced-current contrast versus temperature and applying existing models for interpreting the results, Internal gettering is effective also in p(+) substrates with poly-Si on the back-side when the density of oxygen precipitates is high and their size small. Internal gettering is not effective for low density of oxygen precipitates when either p(+) substrates or poly-Si or both are used. (literal)
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