Carbon precipitation and diffusion in sigec alloys under silicon self-interstitial injection (Articolo in rivista)

Type
Label
  • Carbon precipitation and diffusion in sigec alloys under silicon self-interstitial injection (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1007/s003390201291 (literal)
Alternative label
  • De Salvador D., Coati A., Napolitani E., Berti M., Drigo A.V., Carroll M.S., Sturm J.C., Stangl J., Bauer G., Lazzarini L. (2002)
    Carbon precipitation and diffusion in sigec alloys under silicon self-interstitial injection
    in Applied physics. A, Materials science & processing (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • De Salvador D., Coati A., Napolitani E., Berti M., Drigo A.V., Carroll M.S., Sturm J.C., Stangl J., Bauer G., Lazzarini L. (literal)
Pagina inizio
  • 667 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 75 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento Fis, I-35131 Padua, Italy; Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA; Johannes Kepler Univ, Inst Semicond Phys, Linz, Austria; CNR, MASPEC, I-43010 Parma, Italy (literal)
Titolo
  • Carbon precipitation and diffusion in sigec alloys under silicon self-interstitial injection (literal)
Abstract
  • In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N-2) or oxidizing (O-2) ambient at 850 degreesC for times ranging from 2 to 10 h. The silicon self-interstitial (1) flux coming from the surface under oxidation enhances the C diffusion with respect to the N-2-annealed samples. In the early stages of the oxidation process, the loss of C from the SiGeC layer by diffusion across the layer/cap interface dominates. This phenomenon saturates after an initial period (2-4 h), which depends on the C concentration. This saturation is due to the formation and growth of C-containing precipitates that are promoted by the I injection and act as a sink for mobile C atoms. The influence of carbon concentration on the competition between precipitation and diffusion is discussed. (literal)
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