Silicon crystallization in nanodot arrays organized by block copolymer lithography (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Silicon crystallization in nanodot arrays organized by block copolymer lithography (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1007/s11051-014-2775-6 (literal)

Alternative label

• Perego, Michele; Andreozzi, Andrea; Seguini, Gabriele; Schamm-Chardon, Sylvie; Castro, Celia; BenAssayag, Gerard (2014)
  Silicon crystallization in nanodot arrays organized by block copolymer lithography
  in Journal of nanoparticle research
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Perego, Michele; Andreozzi, Andrea; Seguini, Gabriele; Schamm-Chardon, Sylvie; Castro, Celia; BenAssayag, Gerard (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 16 (literal)

Rivista

• Journal of nanoparticle research (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 10 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 12 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM CNR; Centre National de la Recherche Scientifique (CNRS) (literal)

Titolo

• Silicon crystallization in nanodot arrays organized by block copolymer lithography (literal)

Abstract

• Asymmetric polystyrene-b-polymethylmethacrylate (PS-b-PMMA) block copolymers are used to fabricate nanoporous PS templates with different pore diameter depending on the specific substrate neutralization protocol. The resulting polymeric templates are used as masks for the subsequent deposition of a thin (h = 5 nm) amorphous Si layer by electron beam evaporation. After removal of the polymeric film and of the silicon excess, well-defined hexagonally packed amorphous Si nanodots are formed on the substrate. Their average diameter (d < 20 nm), density (1.2 x 10(11) cm(-2)), and lateral distribution closely mimic the original nanoporous template. Upon capping with SiO2 and high temperature annealing (1050 degrees C, N-2), each amorphous Si nanodot rearranges in agglomerates of Si nanocrystals (d < 4 nm). The average diameter and shape of these Si nanocrystals strongly depend on the size of the initial Si nanodot. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MICHELE PEREGO (Unità di personale interno)
• GABRIELE SEGUINI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Silicon crystallization in nanodot arrays organized by block copolymer lithography" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• MICHELE PEREGO (Unità di personale interno)
• GABRIELE SEGUINI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of nanoparticle research (Rivista)

Insieme di parole chiave di

• Keywords of "Silicon crystallization in nanodot arrays organized by block copolymer lithography" (Insieme di parole chiave)