http://www.cnr.it/ontology/cnr/individuo/prodotto/ID320296
Optimal interface doping at La2/3Sr1/3MnO3/SrTiO3(001) heterojunctions for spintronic applications (Articolo in rivista)
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- Optimal interface doping at La2/3Sr1/3MnO3/SrTiO3(001) heterojunctions for spintronic applications (Articolo in rivista) (literal)
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- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.4802732 (literal)
- Alternative label
Wang, C.; Stojic, N.; Binggeli, N. (2013)
Optimal interface doping at La2/3Sr1/3MnO3/SrTiO3(001) heterojunctions for spintronic applications
in Applied physics letters
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- Wang, C.; Stojic, N.; Binggeli, N. (literal)
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- Abdus Salam International Centre for Theoretical Physics; IOM CNR Democritos (literal)
- Titolo
- Optimal interface doping at La2/3Sr1/3MnO3/SrTiO3(001) heterojunctions for spintronic applications (literal)
- Abstract
- We examine, by means of ab initio pseudopotential calculations, La2/3Sr1/3MnO3/SrTiO3 (LSMO/STO) heterojunctions in which one unit layer of La1-xSrxMnO3 (with 0 < x < 1) is inserted at the interface. The optimal interlayer doping x for a robust interface ferromagnetism is investigated by considering the energy differences between antiferromagnetic and ferromagnetic alignment of the MnO2-interface layer relative to bulk LSMO. The optimal doping is found to be close to x = 1/3, which corresponds to an abrupt TiO2 (001)-layer termination of STO. This is also the composition which gives the largest p-type Schottky barrier height in our calculations. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802732] (literal)
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