Chemical insight into resistive switching devices by HAXPES (Contributo in volume (capitolo o saggio))

Type
Label
  • Chemical insight into resistive switching devices by HAXPES (Contributo in volume (capitolo o saggio)) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Alternative label
  • F. Borgatti (1), A. Herpers (2), C. Lenser (2), C. Park (2), F. Offi (3), G. Panaccione (4), S. Menzel (2), R. Waser (2), R. Dittmann (2) (2014)
    Chemical insight into resistive switching devices by HAXPES
    in DESY PHOTON SCIENCE 2014 Highlights and Annual Report, 2014
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Borgatti (1), A. Herpers (2), C. Lenser (2), C. Park (2), F. Offi (3), G. Panaccione (4), S. Menzel (2), R. Waser (2), R. Dittmann (2) (literal)
Pagina inizio
  • 42 (literal)
Pagina fine
  • 43 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • DESY PHOTON SCIENCE 2014 Highlights and Annual Report (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 2 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR - Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) via P. Gobetti 101, 40129 Bologna, Italy 2. Peter Grünberg Institute Research Center, 52425 Jülich, Germany 3. CNISM and Dipartimento di Scienze Università Roma Tre, 00146 Rome, Italy 4. CNR - Istituto Offi cina dei Materiali (IOM) Laboratorio TASC, S.S.14, Km 163.5 34149 Trieste, Italy (literal)
Titolo
  • Chemical insight into resistive switching devices by HAXPES (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-3-935702-93-5 (literal)
Abstract
  • Complex transition metal oxides may exhibit large electrically driven changes of resistance, thereby attracting considerable attention for the development of non-volatile storage devices. We have used core-level Hard X-ray Photoelectron Spectroscopy (HAXPES) to prove experimentally that resistive switching in Ti/Pr0.48Ca0.52MnO3/SrRuO3 (Ti/PCMO/SRO) thin film heterostructures depends on a redox process occurring on the Ti side of the Ti/PCMO interface. The resistance states are determined by the amount of oxidized Ti ions in the stack, varied through a reversible redox-reaction leading to the formation and shortening of an insulating tunnel barrier. (literal)
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