Simulation of the Temperature Dependence of Hall Carriers in Aluminum Doped 4H-SiC: A comprehensive sudy (Abstract/Poster in convegno)

Type

• Prodotto della ricerca (Classe)
• Abstract/Poster in convegno (Classe)

Label

• Simulation of the Temperature Dependence of Hall Carriers in Aluminum Doped 4H-SiC: A comprehensive sudy (Abstract/Poster in convegno) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Alternative label

• A. Nath; R. Scaburri; Mulpuri V. Rao; R. Nipoti (2011)
  Simulation of the Temperature Dependence of Hall Carriers in Aluminum Doped 4H-SiC: A comprehensive sudy
  in 14th International Conference on Silicon Carbide and Related Materials (ICSCRM2011), Cleveland, Ohio, USA, September 11-16, 2011
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Nath; R. Scaburri; Mulpuri V. Rao; R. Nipoti (literal)

Note

• Poster (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• George Mason University, CNR-IMM Bologna; George Mason University, CNR-IMM Bologna (literal)

Titolo

• Simulation of the Temperature Dependence of Hall Carriers in Aluminum Doped 4H-SiC: A comprehensive sudy (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• RAFFAELE SCABURRI (Persona)
• ROBERTA NIPOTI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ROBERTA NIPOTI (Unità di personale interno)
• RAFFAELE SCABURRI (Persona)