Defect complexes in fluorine-implanted germanium (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Defect complexes in fluorine-implanted germanium (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0022-3727/46/50/505310 (literal)

Alternative label

• Sprouster, D. J.; Campbell, C.; Buckman, S. J.; Impellizzeri, G.; Napolitani, E.; Ruffell, S.; Sullivan, J. P. (2013)
  Defect complexes in fluorine-implanted germanium
  in Journal of physics. D, Applied physics (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Sprouster, D. J.; Campbell, C.; Buckman, S. J.; Impellizzeri, G.; Napolitani, E.; Ruffell, S.; Sullivan, J. P. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 46 (literal)

Rivista

• Journal of physics. D, Applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 50 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Australian National University; University of Catania; University of Catania; University of Padua; University of Padua; Australian National University (literal)

Titolo

• Defect complexes in fluorine-implanted germanium (literal)

Abstract

• In the present article we employ positron annihilation lifetime spectroscopy and secondary ion mass spectrometry to study the thermal evolution of vacancy related defects in fluorine-implanted germanium. We find that fluorine enriches the germanium matrix with various vacancy-like clusters that show both concentration and annealing temperature-dependent behaviour. We demonstrate that low fluorine concentrations saturate the Ge matrix with large concentrations of divacancy-like complexes that are effectively removed after moderate annealing. High fluorine concentrations, however, appear to stabilize a large component of monovacancy-like complexes in the near-surface region of the Ge substrates. These monovacancy-like complexes also appear to be thermodynamically stable, even after high-temperature annealing. The nucleation and thermal evolution of these vacancy-like defects may have particular importance in the fabrication and control of future germanium electronic devices. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ENRICO NAPOLITANI (Unità di personale interno)
• GIULIANA IMPELLIZZERI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ENRICO NAPOLITANI (Unità di personale interno)
• GIULIANA IMPELLIZZERI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of physics. D, Applied physics (Rivista)