Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.88.155439 (literal)

Alternative label

• Coletti, C.; Forti, S.; Principi, A.; Emtsev, K. V.; Zakharov, A. A.; Daniels, K. M.; Daas, B. K.; Chandrashekhar, M. V. S.; Ouisse, T.; Chaussende, D.; MacDonald, A. H.; Polini, M.; Starke, U. (2013)
  Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Coletti, C.; Forti, S.; Principi, A.; Emtsev, K. V.; Zakharov, A. A.; Daniels, K. M.; Daas, B. K.; Chandrashekhar, M. V. S.; Ouisse, T.; Chaussende, D.; MacDonald, A. H.; Polini, M.; Starke, U. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 88 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 15 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Max Planck Society; Istituto Italiano di Tecnologia - IIT; Consiglio Nazionale delle Ricerche (CNR)NANO; Scuola Normale Superiore di Pisa; Lund University; University of South Carolina; Centre National de la Recherche Scientifique (CNRS); University of Texas Austin (literal)

Titolo

• Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study (literal)

Abstract

• In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on alpha-SiC(0001) and beta-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite. (literal)

Prodotto di

• Fenomeni coerenti in nanosistemi semiconduttori ed ibridi (MD.P06.021.002) (Modulo)

Autore CNR

• MARCO POLINI (Unità di personale interno)

Incoming links:

Autore CNR di

• MARCO POLINI (Unità di personale interno)

Prodotto

• Fenomeni coerenti in nanosistemi semiconduttori ed ibridi (MD.P06.021.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)