Thermally induced recrystallization of textured hydrogenated nanocrystalline silicon (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Thermally induced recrystallization of textured hydrogenated nanocrystalline silicon (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.89.045301 (literal)

Alternative label

• Fugallo, Giorgia; Mattoni, Alessandro (2014)
  Thermally induced recrystallization of textured hydrogenated nanocrystalline silicon
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Fugallo, Giorgia; Mattoni, Alessandro (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 89 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 10 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Cittadella Univ (literal)

Titolo

• Thermally induced recrystallization of textured hydrogenated nanocrystalline silicon (literal)

Abstract

• By an analysis of the local crystallinity based on model potential molecular dynamics simulations we investigated the effect of dissolved hydrogen on the thermally induced recrystallization of nanocrystalline silicon. By using the Kolmogorov-Johnson-Mehl-Avrami theory to analyze the atomistic data, we find that the recrystallization rate decreases exponentially with the hydrogen contamination. At low concentration, the kinetics is moderately affected by the H atoms that tend to migrate to the boundaries increasing their effective interface. At higher H content, we find an increasing number of SimHn hydrides that affect the crystalline order of the material and severely impede recrystallization. The analysis based on crystallinity is supported by the atomic scale study of the recrystallization mechanism, here identified as an inverted bond-switching process, and by the ability of hydrates to pin the amorphous-crystalline boundaries. (literal)

Prodotto di

• MD.P06.014.001 Teoria e modeling computazionale di materiali e processi per le nanoscienze (MD.P06.014.002) (Modulo)

Autore CNR

• ALESSANDRO MATTONI (Unità di personale interno)

Incoming links:

Autore CNR di

• ALESSANDRO MATTONI (Unità di personale interno)

Prodotto

• MD.P06.014.001 Teoria e modeling computazionale di materiali e processi per le nanoscienze (MD.P06.014.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)