Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor (Articolo in rivista)

Type
Label
  • Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor (Articolo in rivista) (literal)
Anno
  • 2015-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/2053-1583/2/1/014006 (literal)
Alternative label
  • V. Miseikis, D. Convertino, N. Mishra, M. Gemmi, T. Mashoff, S. Heun, N. Haghighian, F. Bisio, M. Canepa, V. Piazza and C. Coletti (2015)
    Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor
    in 2D Materials
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • V. Miseikis, D. Convertino, N. Mishra, M. Gemmi, T. Mashoff, S. Heun, N. Haghighian, F. Bisio, M. Canepa, V. Piazza and C. Coletti (literal)
Pagina inizio
  • 014006 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 2 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy NEST, Istituto Nanoscienze--CNRand Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, I-16146 Genova, Italy CNR-SPIN, Corso Perrone 24, I-16152 Genova, Italy (literal)
Titolo
  • Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor (literal)
Abstract
  • In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor.Weshow that graphene nucleation density is drastically reduced and crystal growth is accelerated when: (i) using ex situ oxidized foils; (ii) performing annealing in an inert atmosphere prior to growth; (iii) enclosing the foils to lower the precursor impingement flux during growth. Growth rates as high as 14.7 and 17.5 ?mmin-1 are obtained on flat and folded foils, respectively. Thus, singlecrystal grains with lateral size of about 1mmcan be obtained in just 1 h. The samples are characterized by optical microscopy, scanning electron microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy as well as selected area electron diffraction and low-energy electron diffraction, which confirm the high quality and homogeneity of the films. The development of a process for the quick production of large grain graphene in a commonly used commercial CVDreactor is a significant step towards an increased accessibility to millimetre-sized graphene crystals. (literal)
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