http://www.cnr.it/ontology/cnr/individuo/prodotto/ID311509
Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology (Articolo in rivista)
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- Label
- Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.tsf.2013.09.028 (literal)
- Alternative label
Cosentino, S.; Mirabella, S.; Liu, Pei; Le, Son T.; Miritello, M.; Lee, S.; Crupi, I.; Nicotra, G.; Spinella, C.; Paine, D.; Terrasi, A.; Zaslavsky, A.; Pacifici, D. (2013)
Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology
in Thin solid films (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Cosentino, S.; Mirabella, S.; Liu, Pei; Le, Son T.; Miritello, M.; Lee, S.; Crupi, I.; Nicotra, G.; Spinella, C.; Paine, D.; Terrasi, A.; Zaslavsky, A.; Pacifici, D. (literal)
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- http://www.sciencedirect.com/science/article/pii/S004060901301496X (literal)
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- University of Catania; University of Catania; Brown University; IMM CNR (literal)
- Titolo
- Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology (literal)
- Abstract
- In this work, we investigate the spectral response of metal-oxide-semiconductor photodetectors based on Ge nanoclusters (NCs) embedded in a silicon dioxide (SiO2) matrix. The role of GeNC size and density on the spectral response was evaluated by comparing the performance of PDs based on either densely packed arrays of 2 nm-diameter NCs or a more sparse array of 8 nm-diameter Ge NCs. Our Ge NC photodetectors exhibit a high spectral responsivity in the 500-1000 nm range with internal quantum efficiency of similar to 700% at -10 V, and with NC array parameters such as NC density and size playing a crucial role in the photoconductive gain and response time. We find that the configuration with a more dispersed array of NCs ensures a faster photoresponse, due to the larger fraction of electrically-active NCs and the partial suppression of recombination centers. The photoconduction mechanism, assisted by trapping of photo-generated holes in Ge NCs, is discussed for different excitation power and applied bias conditions. Our results provide guidelines for further optimization of high-efficiency Ge NC photodetectors. (literal)
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