Physical mechanisms of intersubband-absorption linewidth broadening in s -Ge/SiGe quantum wells (Articolo in rivista)

Type
Label
  • Physical mechanisms of intersubband-absorption linewidth broadening in s -Ge/SiGe quantum wells (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.90.155420 (literal)
Alternative label
  • Virgilio, Michele[ 1,2 ] ; Sabbagh, Diego[ 3 ] ; Ortolani, Michele[ 4 ] ; Di Gaspare, Luciana[ 3 ] ; Capellini, Giovanni[ 3,5 ] ; De Seta Monica [ 3 ] (2014)
    Physical mechanisms of intersubband-absorption linewidth broadening in s -Ge/SiGe quantum wells
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Virgilio, Michele[ 1,2 ] ; Sabbagh, Diego[ 3 ] ; Ortolani, Michele[ 4 ] ; Di Gaspare, Luciana[ 3 ] ; Capellini, Giovanni[ 3,5 ] ; De Seta Monica [ 3 ] (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84908052167&partnerID=q2rCbXpz (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 90 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 15 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, Italy [ 2 ] CNR, NEST, Ist Nanosci, I-56127 Pisa, Italy [ 3 ] Univ Roma Tre, Dipartimento Sci, I-00146 Rome, Italy [ 4 ] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy [ 5 ] IHP, D-15236 Frankfurt, Germany (literal)
Titolo
  • Physical mechanisms of intersubband-absorption linewidth broadening in s -Ge/SiGe quantum wells (literal)
Abstract
  • We analyze the linewidth of intersubband absorption features observed in n-type s-Ge/Ge0.82Si0.18 multiquantum wells grown on Si(001) substrates. Supported by a thorough theoretical modeling, we discuss the role on the line broadening of electron scattering due to interface roughness, spatial distribution and density of ionized donors, phonons, alloy disorder, and extended defects. To this aim, the absorption spectra of a set of samples featuring different well widths and doping profiles are measured obtaining a very good agreement with the theoretical results. We demonstrate values of the half width at half maximum of the E0->E1 absorption peak as small as 2 meV. Our analysis suggests that the coherence time of electron wave functions in n-doped Ge/SiGe quantum wells is not yet limited by intrinsic scattering mechanisms up to room temperature, opening new perspectives for the quantum design of silicon-based light emitting devices. (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it