Electrical characterization of a buried GaSb p-n junction controlled by native defects (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Electrical characterization of a buried GaSb p-n junction controlled by native defects (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/crat.201300411 (literal)

Alternative label

• Gorni M.; Parisini A.; Gombia E.; Baldini M.; Vantaggio S.; Ghezzi C. (2014)
  Electrical characterization of a buried GaSb p-n junction controlled by native defects
  in Crystal Research and Technology; Wiley-VCH Verlag, GmbH, Weinheim (Germania)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Gorni M.; Parisini A.; Gombia E.; Baldini M.; Vantaggio S.; Ghezzi C. (literal)

Pagina inizio

• 628 (literal)

Pagina fine

• 633 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/inward/record.url?eid=2-s2.0-84906313417&partnerID=q2rCbXpz (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 49 (literal)

Rivista

• Crystal Research and Technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 8 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNISM-Dipartimento di Fisica, Università di Parma, Viale G.P. Usberti n.7/A, 43124 Parma, Italy; IMEM-CNR, Parco Area delle Scienze 37/A, 43100 Parma, Italy; Leibniz Institute for Crystal Growth, Berlin, Germany (literal)

Titolo

• Electrical characterization of a buried GaSb p-n junction controlled by native defects (literal)

Abstract

• Buried GaSb junctions were induced in Te-doped GaSb bulk crystals by growing a heavily Zn-doped GaAs layer on GaSb. However, the p-n junction resulted to be located much more deeply with respect to the Zn diffusion front and originated by a local rising up of native acceptor density, which controls the p-type conductivity conversion of the GaSb substrate for about 1 ?m beyond the Zn penetration depth. Admittance spectroscopy measurements supported the identification of such defects with the double native acceptor GaSb. Current-voltage characteristics of the p-n junction, performed after the removal of the GaAs layer, were here analyzed as a function of the temperature for different Zn doping levels and resulted consistent with the model previously proposed to explain the formation of the junctions. (literal)

Editore

• Wiley-VCH Verlag, GmbH (Editore)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)

Autore CNR

• ENOS GOMBIA (Persona)

Insieme di parole chiave

• Keywords of "Electrical characterization of a buried GaSb p-n junction controlled by native defects" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)

Autore CNR di

• ENOS GOMBIA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Crystal Research and Technology (Rivista)

Editore di

• Wiley-VCH Verlag, GmbH (Editore)

Insieme di parole chiave di

• Keywords of "Electrical characterization of a buried GaSb p-n junction controlled by native defects" (Insieme di parole chiave)