Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing (Articolo in rivista)

Type
Label
  • Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Alternative label
  • Severi, Maurizio; Mattei, Giorgio; Dori, Leonello; Maccagnani, Piera; Baldini, Gian Luigi; Pizzochero, Giulio (2014)
    Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing
    in Proceedings of the European Solid State Device Research Conference
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Severi, Maurizio; Mattei, Giorgio; Dori, Leonello; Maccagnani, Piera; Baldini, Gian Luigi; Pizzochero, Giulio (literal)
Pagina inizio
  • 657 (literal)
Pagina fine
  • 660 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scopus.com/record/display.url?eid=2-s2.0-84907788326&origin=inward (literal)
Rivista
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  • 4 (literal)
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  • Scopu (literal)
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  • Consiglio Nazionale delle Ricerche (literal)
Titolo
  • Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing (literal)
Abstract
  • Charge trapping and dielectric wear-out properties of 8 and 30 nm SiO2 layers nitrided in the N2O gas using a Rapid Thermal System are evaluated injecting charge at either low (by avalanche technique) or high (by Fowler-Nordheim technique) electric fields. In the experimental conditions studied, the results have pointed out that, compared to a standard silicon dioxide layer, a SiO2 film nitrided in the N2O gas exhibits a reduced electron/hole trapping efficiency and, independently of the injection polarity, an improved charge-to-breakdown (QBD) characteristics. (literal)
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