Microstructural characterization of GaAs-Al xGa 1-xAs core-shell nanowires grown by Au-catalyst assisted MOVPE (Contributo in atti di convegno)

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Label
  • Microstructural characterization of GaAs-Al xGa 1-xAs core-shell nanowires grown by Au-catalyst assisted MOVPE (Contributo in atti di convegno) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1557/opl.2011.871 (literal)
Alternative label
  • Altamura D.; Miccoli I.; Prete P.; Lovergine N.; Tapfer L. (2011)
    Microstructural characterization of GaAs-Al xGa 1-xAs core-shell nanowires grown by Au-catalyst assisted MOVPE
    in MRS Spring Meeting 2011, San Francisco (USA), April 26 - 29, 2011
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Altamura D.; Miccoli I.; Prete P.; Lovergine N.; Tapfer L. (literal)
Pagina inizio
  • 7 (literal)
Pagina fine
  • 12 (literal)
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  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84860640433&partnerID=q2rCbXpz (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Semiconductor Nanowires - From Fundamentals to Applications (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 1350 (literal)
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  • 1350 (literal)
Rivista
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Ingegneria dell'Innovazione, Università del Salento, Via Monteroni, I-73100 Lecce, Italy; ENEA, Unità Tecnica Tecnologia dei Materiali Brindisi (UTTMATB), S.S. 7 Appia km 706, I-72100 Brindisi, Italy; Istituto Per la Microelettronica e Microsistemi (IMM), CNR, Via Monteroni, I-73100 Lecce, Italy; Istituto di Cristallografia (IC), CNR, Via G. Amendola 122, I-70126 Bari, Italy (literal)
Titolo
  • Microstructural characterization of GaAs-Al xGa 1-xAs core-shell nanowires grown by Au-catalyst assisted MOVPE (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 9781617387609 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • A.A.V.V. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • M. Bjork (literal)
Abstract
  • In this work, we report on the microstructural and morphological characterization of III-V semiconductor nanowires (NWs) epitaxially grown on (111)B-GaAs substrates by Au-catalyst assisted metalorganic vapor phase epitaxy. As-grown dense (10 8-10 9 cm -2) arrays of few-micron long vertically-aligned (i.e. parallel to the ?111? crystallographic axis) GaAs, Al xGa 1-xAs and core-shell GaAs-Al xGa 1-xAs NWs were investigated, carrying out HRXRD measurements on different (hkl) reflections and by recording reciprocal space maps (RSMs) around the materials (111) reciprocal lattice points (relps). We show that NW diffraction peaks are visible in the RSM by means of characteristic halos. In the case of GaAs NWs, the halo is located at the (111) relp indicating that the NWs are grown along the ?111? direction and parallel to the ?111? axis of the GaAs substrate. On the contrary, for Al xGa 1-xAs NWs or intentional core-shell GaAs-Al xGa 1-xAs NWs the halo is displaced (along the momentum transfer normal to the surface, Q z) with respect to the GaAs (111) relp due to the elastic lattice strain associated with the compositional variation, e.g. the Al molar fraction in the Al xGa 1-xAs alloy, within the nanostructures. (literal)
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