http://www.cnr.it/ontology/cnr/individuo/prodotto/ID302616

Microscopic model for the kinetics of the reset process in HfO 2 RRAM (Contributo in atti di convegno)

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Microscopic model for the kinetics of the reset process in HfO 2 RRAM (Contributo in atti di convegno) (literal)

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Alternative label

A Kalantarian, G Bersuker, B Butcher, DC Gilmer, S Privitera, S Lombardo, R Geer, Y Nishi, P Kirsch, R Jammy (2013)
Microscopic model for the kinetics of the reset process in HfO 2 RRAM
in 2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsinchu, 22-24 Aprile 2013
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

A Kalantarian, G Bersuker, B Butcher, DC Gilmer, S Privitera, S Lombardo, R Geer, Y Nishi, P Kirsch, R Jammy (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6545582&isnumber=6545273 (literal)

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Abstract

A detailed model for the reset process kinetics in HfO2-based RRAM is presented describing the transition between low and high resistance states at the atomic level. Based on the filament characteristics as observed by TEM, the kinetics of the reset operation is simulated using the Time Dependent Monte Carlo (TDMC) method incorporating ab-initio calculated microscopic characteristics of the oxygen ions in hafnia. Temperature and field driven oxygen diffusion in the oxide surrounding the filament is shown to provide the needed supply of oxygen to re-oxidize the tip of the filament and switch the device to the High Resistance State (HRS). (literal)

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