http://www.cnr.it/ontology/cnr/individuo/prodotto/ID300301
How spectroscopic ellipsometry can aid graphene technology? (Articolo in rivista)
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- Label
- How spectroscopic ellipsometry can aid graphene technology? (Articolo in rivista) (literal)
- Anno
- 2014-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.tsf.2014.03.057 (literal)
- Alternative label
Losurdo, Maria; Giangregorio, Maria M.; Bianco, Giuseppe V.; Capezzuto, Pio; Bruno, Giovanni (2014)
How spectroscopic ellipsometry can aid graphene technology?
in Thin solid films (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Losurdo, Maria; Giangregorio, Maria M.; Bianco, Giuseppe V.; Capezzuto, Pio; Bruno, Giovanni (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- IMIP-CNR
University of Bari (literal)
- Titolo
- How spectroscopic ellipsometry can aid graphene technology? (literal)
- Abstract
- We explore the effects of substrate, grain size, oxidation and cleaning on the optical properties of chemical vapor deposited polycrystalline monolayer graphene exploiting spectroscopic ellipsometry in the NIR-Vis-UV range. Both Drude-Lorentz oscillators' and point-by-point fit approaches are used to analyze the ellipsometric spectra. For monolayer graphene, since anisotropy cannot be resolved, an isotropic model is used. A prominent absorption peak at approximately 4.8 eV, which is a mixture of pi-pi* interband transitions at the M-point of the Brillouin zone and of the pi-plasmonic excitation, is observed. We discuss the sensitivity of this peak to the structural and cleaning quality of graphene. The comparison with previous published dielectric function spectra of graphene is discussed giving a rationale for the observed differences. (C) 2014 Elsevier B.V. All rights reserved. (literal)
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