4H-SiC Schottky Photodiodes for Ultraviolet Light Detection (Articolo in rivista)

Type
Label
  • 4H-SiC Schottky Photodiodes for Ultraviolet Light Detection (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/NSSMIC.2011.6154652 (literal)
Alternative label
  • M. Mazzillo 1, A. Sciuto 2, F. Roccaforte 2, V. Raineri 1 (2011)
    4H-SiC Schottky Photodiodes for Ultraviolet Light Detection
    in IEEE conference record - Nuclear Science Symposium & Medical Imaging Conference.
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Mazzillo 1, A. Sciuto 2, F. Roccaforte 2, V. Raineri 1 (literal)
Pagina inizio
  • 1642 (literal)
Pagina fine
  • 1646 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. STMicroelectronics, Catania (Italy) 2. CNR-IMM, Catania (Italy) (literal)
Titolo
  • 4H-SiC Schottky Photodiodes for Ultraviolet Light Detection (literal)
Abstract
  • In recent years Silicon Carbide (SiC) photodiodes have been proposed for ultraviolet (UV) light detection because of their robustness even in harsh environments, high quantum efficiency in all the UV range (200 nm-400 nm), excellent visible blindness, low dark current and high speed. Here, we report on the electro-optical performances and use in application of high signal-to noise ratio low reverse biased 4H-SiC vertical Schottky photodiodes based on the pinch-off surface effect, obtained by means of self-aligned Nickel Silicide (Ni2Si) interdigitated contacts. The characteristics of these devices could make their use appealing also in nuclear applications like for example scintillation light detection. (literal)
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