The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mseb.2014.07.003 (literal)

Alternative label

• Mikolasek, Miroslav; Nemec, Michal; Kovac, Jaroslav; Foti, Marina; Gerardi, Cosimo; Mannino, Giovanni; Valenti, Luca; Lombardo, Salvatore (2014)
  The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells
  in Materials science & engineering. B, Solid-state materials for advanced technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mikolasek, Miroslav; Nemec, Michal; Kovac, Jaroslav; Foti, Marina; Gerardi, Cosimo; Mannino, Giovanni; Valenti, Luca; Lombardo, Salvatore (literal)

Pagina inizio

• 1 (literal)

Pagina fine

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 189 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Slovak University of Technology Bratislava; STMicroelectronics; Consiglio Nazionale delle Ricerche (CNR) (literal)

Titolo

• The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells (literal)

Abstract

• This paper presents a comparative study of the influence of post-deposition annealing on amorphous silicon/crystalline silicon heterojunction solar cells deposited by ICP-CVD and PE-CVD techniques. Two major effects on the solar cell efficiency occur caused by thermal annealing. The first effect is a slight improvement of the performance on annealing up to 250 degrees C. The second effect, for annealing temperatures above 250 degrees C, reveals deterioration of the solar cell performance. It is suggested that both effects are related-to thermally activated diffusion of hydrogen. For low annealing temperatures, diffusion of weakly bonded hydrogen allows to passivate the defects in the amorphous emitter and at the heterointerface. In the high temperature annealing region, outdiffusion of hydrogen is assumed to be responsible for an increase of defect states in the structures. The results indicate a better stability after high temperature treatment for the sample prepared by ICP-CVD technology. (C) 2014 Elsevier B.V. All rights reserved. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SALVATORE LOMBARDO (Persona)
• GIOVANNI MANNINO (Persona)

Insieme di parole chiave

• Parole chiave di "The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GIOVANNI MANNINO (Persona)
• SALVATORE LOMBARDO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Insieme di parole chiave di

• Parole chiave di "The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells" (Insieme di parole chiave)