PZT FILM ON SILICON BY ELECTROPHORETIC DEPOSITION (Comunicazione a convegno)

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Label
  • PZT FILM ON SILICON BY ELECTROPHORETIC DEPOSITION (Comunicazione a convegno) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Alternative label
  • Pietro Galizia, Carlo Baldisserri, Carmen Galassi, (2014)
    PZT FILM ON SILICON BY ELECTROPHORETIC DEPOSITION
    in Electrophoretic Deposition: Fundamentals and Applications, Hernstein (Austria), 5-10 ottobre 2014
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Pietro Galizia, Carlo Baldisserri, Carmen Galassi, (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • http://www.engconf.org/staging/wp-content/uploads/2014/10/14AE-Oral-Abstracts.pdf http://www.engconf.org/staging/wp-content/uploads/2013/03/14AE-Fin-Program-Web.pdf (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-ISTEC, Italy (literal)
Titolo
  • PZT FILM ON SILICON BY ELECTROPHORETIC DEPOSITION (literal)
Abstract
  • PZT film on silicon by electrophoretic deposition Pietro Galizia, Carlo Baldisserri, Carmen Galassi CNR-ISTEC Via Granarolo, 64, I-48018 Faenza (ITALY) In recent times direct integration of ferroelectrics on silicon wafer has been attracting interest [1]. Electrophoretic deposition (EPD) was investigated in this laboratory [2] as an alternative mean to produce lead zirconate titanate (PZT) film on silicon wafers followed by sintering at 850-950°C. EPD is an easily implemented deposition technique that requires only basic laboratory gear and a sufficiently stable colloidal suspension to produce ceramic and electroceramic films with thickness in the 100 nm - 10 mm range3. It has been found that the EPD of niobium-doped lead zirconate titanate (PZTN), performed in ethanol-based suspensions of PZT on bare silicon wafers on which Al/Si alloyed ohmic contacts were made, produced smooth green films that strongly pinned to the silicon substrate after sintering. Thick and well-adhered sintered PZT films on silicon having thickness about 50 µm were thus obtained. Such structures could be the core of novel on-chip sensors/actuators. The results of the production of thick PZT films by EPD and sintering and some characterizations of the same are reported. Presenting author: Carmen Galassi carmen.galassi@istec.cnr.it, 0039 0546699750 [1] M. Y. Gureev, A. K. Tangatsev, N. Setter; IEEE T Ultrason Ferr, 58, 1959 (2011) [2] C. Baldisserri, D. Gardini, C. Galassi; Sensor Actuat A-Phys, 174, 123 (2012) [3] P. Sarkar, P.S. Nicholson; J Am Ceram Soc, 79, 1987 (1996) (literal)
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