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Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique (Articolo in rivista)

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Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique (Articolo in rivista) (literal)

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S. Rampino and M. Bronzoni and L. Colace and P. Frigeri and E. Gombia and C. Maragliano and F. Mezzadri and L. Nasi and L. Seravalli and F. Pattini and G. Trevisi and M. Motapothula and T. Venkatesan and E. Gilioli (2015)
Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique
in Solar energy materials and solar cells
(literal)

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S. Rampino and M. Bronzoni and L. Colace and P. Frigeri and E. Gombia and C. Maragliano and F. Mezzadri and L. Nasi and L. Seravalli and F. Pattini and G. Trevisi and M. Motapothula and T. Venkatesan and E. Gilioli (literal)

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IMEM-CNR Institute, Parco Area Delle Scienze 37/A, 43124 Parma, Italy Department of Engineering, University \"Roma Tre\", Via Vito Volterra, 62, 00146 Rome, Italy LENS Laboratory, Masdar Institute of Science and Technology, Masdar City, PO Box 54224, Abu Dhabi, United Arab Emirates NUSNNI-NanoCore, National University of Singapore, Singapore 117576, Singapore (literal)

Titolo

Low-temperature growth of single-crystal Cu(In,Ga)Se2 films by pulsed electron deposition technique (literal)

Abstract

High quality epitaxial crystalline Cu(In,Ga)Se2 (CIGS) films were grown on n-type (1 0 0)--Germanium (Ge) substrates using pulsed electron deposition (PED) technique at a remarkably low substrate temperature of 300 °C, thanks to the high-energy of adatoms arriving to the substrate. The crystalline quality was confirmed by X-ray diffraction techniques and from Transmission Electron Microscopy and the only defects found were twin boundaries along the (1 1 2) direction in these CIGS films; surprisingly neither misfit dislocations nor Kinkerdall voids were observed. A 100 meV optical band located below the band edge was observed by Photoluminescence technique. Current-voltage and capacitance-voltage measurements confirm an intrinsic p-type conductivity of CIGS films, with a free carrier concentration of ?3.5×1016 cm-3. These characteristics of crystalline CIGS films are crucial for a variety of potential applications, such as more efficient absorber layers in single-junction and as an integral component of multi-junction thin-film solar cells. (literal)

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