Redheffer products and numerical approximation of currents in one-dimensional semiconductor kinetic models (Articolo in rivista)

Type
Label
  • Redheffer products and numerical approximation of currents in one-dimensional semiconductor kinetic models (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1137/130939584 (literal)
Alternative label
  • Laurent Gosse (2014)
    Redheffer products and numerical approximation of currents in one-dimensional semiconductor kinetic models
    in Multiscale modeling & simulation (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Laurent Gosse (literal)
Pagina inizio
  • 1533 (literal)
Pagina fine
  • 1560 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 12 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IAC \"Mauro Picone\" (literal)
Titolo
  • Redheffer products and numerical approximation of currents in one-dimensional semiconductor kinetic models (literal)
Abstract
  • When numerically simulating a kinetic model of an n+nn+ semiconductor device, obtaining a constant macroscopic current at steady state is still a challenging task. Part of the difficulty comes from the multiscale, discontinuous nature of both p|n junctions, which create spikes in the electric field and enclose a channel where corresponding depletion layers glue together. The kinetic formalism furnishes a model holding inside the whole domain, but at the price of strongly varying parameters. By concentrating both the electric acceleration and the linear collision terms at each interface of a Cartesian computational grid, we can treat them by means of a Godunov scheme involving two types of scattering matrices. Combining both these mechanisms into a global Smatrix can be achieved thanks to \"Redheffer's star-product.\" Assuming that the resulting S-matrix is stochastic permits us to prove maximum principles under a mild CFL restriction. Numerical illustrations of collisional Landau damping and various n+nn+ devices are provided on coarse grids. (literal)
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