Downscaling effects on self-heating related instabilities in p-channel polycrystalline silicon thin film transistors (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Downscaling effects on self-heating related instabilities in p-channel polycrystalline silicon thin film transistors (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3621874 (literal)

Alternative label

• Valletta, Antonio; Gaucci, Paolo; Mariucci, Luigi; Pecora, Alessandro; Maiolo, Luca; Fortunato, Guglielmo (2011)
  Downscaling effects on self-heating related instabilities in p-channel polycrystalline silicon thin film transistors
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Valletta, Antonio; Gaucci, Paolo; Mariucci, Luigi; Pecora, Alessandro; Maiolo, Luca; Fortunato, Guglielmo (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/record/display.url?eid=2-s2.0-80051582557&origin=inward (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 99 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 5 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Consiglio Nazionale delle Ricerche (literal)

Titolo

• Downscaling effects on self-heating related instabilities in p-channel polycrystalline silicon thin film transistors (literal)

Abstract

• Downscaling of polycrystalline silicon (polysilicon) thin film transistors (TFTs) is currently pursued to improve device speed, and in the present work we analyze the effects of downscaling on the self-heating related instability. Experimental results show improved stability of scaled polysilicon TFTs operating at same power densities. To explain this effect we performed three-dimensional thermo-electric numerical simulations, indicating that channel temperature reduction occurs in the scaled devices due to enhanced lateral thermal dissipation. Therefore, the present results show that downscaling not only provides higher speed devices but also a route for reducing self-heating related instability in polysilicon TFTs. © 2011 American Institute of Physics. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANTONIO VALLETTA (Unità di personale interno)
• LUIGI MARIUCCI (Unità di personale interno)
• LUCA MAIOLO (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ANTONIO VALLETTA (Unità di personale interno)
• LUIGI MARIUCCI (Unità di personale interno)
• LUCA MAIOLO (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)