Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer (Articolo in rivista)

Type
Label
  • Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0022-3727/47/39/394002 (literal)
Alternative label
  • Sergio Bietti, Claudio Somaschini, Cesare Frigeri, Alexey Fedorov, Luca Esposito, Lutz Geelhaar, and Stefano Sanguinetti (2014)
    Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer
    in Journal of physics. D, Applied physics (Print); IOP PUBLISHING, BRISTOL (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Sergio Bietti, Claudio Somaschini, Cesare Frigeri, Alexey Fedorov, Luca Esposito, Lutz Geelhaar, and Stefano Sanguinetti (literal)
Pagina inizio
  • 394002 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://iopscience.iop.org/0022-3727/47/39/394002/ (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 47 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, I-20125, Milano, Italy 2 CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43100 Parma, Italy 3 L-NESS and CNR-IFN, via Anzani 42, I-22100 Como, Italy 4 Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany (literal)
Titolo
  • Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer (literal)
Abstract
  • We present the growth of self-assisted GaAs nanowires (NWs) with selectable number density on bare Si(1 1 1), not covered by the silicon oxide. We determine the number density of the NWs by initially self-assembling GaAs islands on whose top a single NW is nucleated. The number density of the initial GaAs base islands can be tuned by droplet epitaxy and the same degree of control is then transferred to the NWs. This procedure is completely performed during a single growth in an ultra-high vacuum environment and requires neither an oxide layer covering the substrate, nor any pre-patterning technique. (literal)
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