Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0268-1242/29/5/054001 (literal)

Alternative label

• Orru M.[ 1 ]; Rubini S.[ 1 ]; Roddaro S.[ 1,2,3 ] (2014)
  Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing
  in Semiconductor science and technology (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Orru M.[ 1 ]; Rubini S.[ 1 ]; Roddaro S.[ 1,2,3 ] (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scopus.com/inward/record.url?eid=2-s2.0-84898993446&partnerID=q2rCbXpz (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 29 (literal)

Rivista

• Semiconductor science and technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 5 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• We demonstrate the formation of nanoscale axial Schottky contacts in GaAs nanowires by thermal annealing of NiGeAu multilayers. Energy dispersive x-ray spectroscopy indicates that in specific annealing conditions a sharply-defined Au-rich phase can be obtained in the vicinity of the metallic contacts. Charge transport characteristics are analyzed for different degrees of diffusion of the Au-rich phase in the wire and indicate that it has a metallic nature. The mechanism behind this local post-growth modification of the nanowire composition and its potential impact on device applications are discussed. (literal)

Titolo

• Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing (literal)

Abstract

• We demonstrate the formation of nanoscale axial Schottky contacts in GaAs nanowires by thermal annealing of NiGeAu multilayers. Energy dispersive x-ray spectroscopy indicates that in specific annealing conditions a sharply-defined Au-rich phase can be obtained in the vicinity of the metallic contacts. Charge transport characteristics are analyzed for different degrees of diffusion of the Au-rich phase in the wire and indicate that it has a metallic nature. The mechanism behind this local post-growth modification of the nanowire composition and its potential impact on device applications are discussed. © 2014 IOP Publishing Ltd. (literal)

Prodotto di

• MD.P06.017.002 Sintesi e studio di nanostrutture (MD.P06.017.006) (Modulo)
• Fenomeni coerenti in nanosistemi semiconduttori ed ibridi (MD.P06.021.002) (Modulo)

Autore CNR

• STEFANO RODDARO (Persona)
• SILVIA RUBINI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• SILVIA RUBINI (Unità di personale interno)
• STEFANO RODDARO (Persona)

Prodotto

• Fenomeni coerenti in nanosistemi semiconduttori ed ibridi (MD.P06.021.002) (Modulo)
• MD.P06.017.002 Sintesi e studio di nanostrutture (MD.P06.017.006) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Semiconductor science and technology (Rivista)

Insieme di parole chiave di

• Keywords of "Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing" (Insieme di parole chiave)