http://www.cnr.it/ontology/cnr/individuo/prodotto/ID282000

Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion (Articolo in rivista)

Type

Prodotto della ricerca (Classe)
Articolo in rivista (Classe)

Label

Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion (Articolo in rivista) (literal)

Anno

2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1063/1.4890030 (literal)

Alternative label

Manuel Schnabel, Charlotte Weiss, Philipp Löper, Mariaconcetta Canino, Caterina Summonte, Peter R. Wilshaw, and Stefan Jan (2014)
Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion
in Journal of applied physics (online); AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Manuel Schnabel, Charlotte Weiss, Philipp Löper, Mariaconcetta Canino, Caterina Summonte, Peter R. Wilshaw, and Stefan Jan (literal)

Pagina inizio

024315-1 (literal)

Pagina fine

024315-10 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

http://dx.doi.org/10.1063/1.4890030 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

119 (literal)

Rivista

Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

10 (literal)

Note

ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

1Fraunhofer-Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg, Germany 2Department of Materials, University of Oxford, Parks Rd, Oxford OX1 3PH, United Kingdom 3CNR-IMM, Via Piero Gobetti 101, 40129 Bologna, Italy (literal)

Titolo

Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion (literal)

Abstract

Nanocrystalline silicon carbide (nc-SiC) is an interesting material for electronics applications, both in its own right and as a host matrix for silicon quantum dots. When synthesized by annealing of a-SiC:H on Si substrates, interdiffusion of dopants occurs if either the a-SiC:H or the Si substrate is doped. Annealing a-SiC:H on highly boron-doped substrates at 1100 ?C leads to a fairly homogeneous doping level of ?4?1019 cm?3 throughout the nc-SiC film. An unexpected anomaly in secondary ion mass spectroscopy quantification is observed and a method to circumvent it is shown. The nanostructure of the nc-SiC is only weakly affected as most of the diffusion occurs after the onset of crystallization. Annealing of doped a-SiC:H on Si substrates at 1100 ?C leads to strong free carrier absorption at infrared wavelengths. This is demonstrated to originate from dopants that have diffused from the a-SiC:H to the Si substrate, and a method is developed to extract from it the doping profile in the Si substrate. The detection limit of this method is estimated to be ?6?1013 cm?2. Doping levels of (0.5-3.5)?1019 cm?3 are induced at the Si substrate surface by both boron and phosphorus-doped a-SiC:H. When the Si substrate is doped opposite to the a-SiC:H p-n junctions are induced at a depth of 0.9-1.4 lm within the Si substrate for substrate resistivities of 1-10 X cm. Implications for different solar cell architectures are discussed. Dopant diffusion can be strongly reduced by lowering the annealing temperature to 1000 ?C, albeit at the expense of reduced crystallinity.VC 2014 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4890030] (literal)

Editore