Unintentional high-density p-type modulation doping of a GaAs/alas core-multishell nanowire (Articolo in rivista)

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  • Unintentional high-density p-type modulation doping of a GaAs/alas core-multishell nanowire (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/nl500818k (literal)
Alternative label
  • Jadczak J.; Plochocka P.; Mitioglu A.; Breslavetz I.; Royo M.; Bertoni A.; Goldoni G.; Smolenski T.; Kossacki P.; Kretinin A.; Shtrikman H.; Maude D.K. (2014)
    Unintentional high-density p-type modulation doping of a GaAs/alas core-multishell nanowire
    in Nano letters (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Jadczak J.; Plochocka P.; Mitioglu A.; Breslavetz I.; Royo M.; Bertoni A.; Goldoni G.; Smolenski T.; Kossacki P.; Kretinin A.; Shtrikman H.; Maude D.K. (literal)
Pagina inizio
  • 2807 (literal)
Pagina fine
  • 2814 (literal)
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  • http://www.scopus.com/inward/record.url?eid=2-s2.0-84900472851&partnerID=q2rCbXpz (literal)
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  • 14 (literal)
Rivista
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  • 5 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, 143, avenue de Rangueil, 31400 Toulouse, France; Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Poland; Laboratoire National des Champs Magnétiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue de Martyrs, 38042 Grenoble, France; Institute for Nanoscience, CNR-NANO S3, via Campi 213/A, 41125 Modena, Italy; Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, Poland; Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel (literal)
Titolo
  • Unintentional high-density p-type modulation doping of a GaAs/alas core-multishell nanowire (literal)
Abstract
  • Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an unintentional p-type doping. Magneto-optical studies of such a GaAs/AlAs core-multishell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/shell interface due to the presence of ionized carbon acceptors in the 1 nm GaAs layer in the shell. Microphotoluminescence in high magnetic field shows a clear signature of avoided crossings of the n = 0 Landau level emission line with the n = 2 Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large two-dimensional hole density in the structure. © 2014 American Chemical Society. (literal)
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