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High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition (Articolo in rivista)

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High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition (Articolo in rivista) (literal)

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Alternative label

Chiarella, F.; Toccoli, T.; Barra, M.; Aversa, L.; Ciccullo, F.; Tatti, R.; Verucchi, R.; Iannotta, S.; Cassinese, A. (2014)
High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition
in Applied physics letters; AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 (Stati Uniti d'America)
(literal)

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Chiarella, F.; Toccoli, T.; Barra, M.; Aversa, L.; Ciccullo, F.; Tatti, R.; Verucchi, R.; Iannotta, S.; Cassinese, A. (literal)

Pagina inizio

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http://scitation.aip.org/content/aip/journal/apl/104/14/10.1063/1.4870991 (literal)

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1 CNR-SPIN and Physics Department, University of Naples, Piazzale Tecchio 80, I-80125 Naples, Italy; 2 IMEM-CNR-FBK Division of Trento, Via alla Cascata 56/C, I-38123 Povo, Italy; 3 IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma, Italy (literal)

Titolo

High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition (literal)

Abstract

In this paper, we report on the fabrication of N,N'-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN2) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm(2)/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound. (C) 2014 AIP Publishing LLC. (literal)

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