Effect of stress on defect transformation in B+ and Ag+ implanted HgCdTe/CdZnTe structures (Articolo in rivista)

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Label
  • Effect of stress on defect transformation in B+ and Ag+ implanted HgCdTe/CdZnTe structures (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.12693/APhysPolA.125.1003 (literal)
Alternative label
  • R.K. Savkina a, A.B. Smirnov a, A.I. Gudymenko a, V.P. Kladko a, F.F. Sizov a and C. Frigeri b (2014)
    Effect of stress on defect transformation in B+ and Ag+ implanted HgCdTe/CdZnTe structures
    in Acta Physica Polonica. A (Online); Polish Academy of Sciences, Varsavia (Polonia)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • R.K. Savkina a, A.B. Smirnov a, A.I. Gudymenko a, V.P. Kladko a, F.F. Sizov a and C. Frigeri b (literal)
Pagina inizio
  • 1003 (literal)
Pagina fine
  • 1005 (literal)
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  • 15th International Conference on Defects Recognition, Imaging and Physics in Semiconductors Warsaw, Poland, September 15-19, 2013 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 125 (literal)
Rivista
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  • 3 (literal)
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  • 4 (literal)
Note
  • Scopu (literal)
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  • a V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 41, 03028 Kiev, Ukraine b CNR-IMEM Institute, Parco Area Delle Scienze, 37/A Fontanini, 43010 Parma, Italy (literal)
Titolo
  • Effect of stress on defect transformation in B+ and Ag+ implanted HgCdTe/CdZnTe structures (literal)
Abstract
  • The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface re- gions of (111) Hg1..xCdxTe (x = 0:223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses (B+ and Ag+) leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum me- chanical stresses differing by two orders of magnitude (1:4-103 Pa and 2:2-105 Pa, respectively). The structural properties of the Hg1..xCdxTe epilayers were investigated using X-ray high-resolution reciprocal space mapping. (literal)
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