Influence of substrate pre-treatments on the growth of SixNyHz thin films by plasma enhanced chemical vapor deposition (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Influence of substrate pre-treatments on the growth of SixNyHz thin films by plasma enhanced chemical vapor deposition (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Di Franco, C; Scamarcio, G (2008)
  Influence of substrate pre-treatments on the growth of SixNyHz thin films by plasma enhanced chemical vapor deposition
  in Surface & coatings technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Di Franco, C; Scamarcio, G (literal)

Pagina inizio

• 3081 (literal)

Pagina fine

• 3087 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 202 (literal)

Rivista

• Surface & coatings technology (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• \"[Di Franco, C.; Scamarcio, G.] CNR, INFM, Reg Lab LIT, I-70126 Bari, Italy; [Scamarcio, G.] Univ Bari, Dept Phys, I-70126 Bari, Italy (literal)

Titolo

• Influence of substrate pre-treatments on the growth of SixNyHz thin films by plasma enhanced chemical vapor deposition (literal)

Abstract

• A two-step plasma enhanced chemical vapor deposition procedure has been developed to produce high quality SixNyHz films for quantum cascade laser applications. The procedure consists in exposing the GaAs substrate to a controlled N-2 plasma previous to the silicon nitride film deposition. The pre-treatment causes the formation of a thin GaN film that passivates the GaAs wafer. The method has been optimized varying RF power, N-2 flow rate and process time of the pre-treatments and monitoring their effects on the resulting chemical composition and dielectric properties of the nitride overlayers, by means of infrared spectroscopy, X-ray photoelectron spectroscopy and electric characterizations. A narrow window in the pre-treatment RF power, N-2 flux and time values, improves the composition, structural and dielectric properties of the silicon nitride overlayers. The best result has been found depositing the silicon nitride films on GaAs wafer after 2 min of N-2 plasma treatment with a power of 20 W and a 50 cm(3)/min flow rate. (C) 2007 Elsevier B.V. All rights reserved. (literal)

Prodotto di

• Sviluppo e applicazioni di sorgenti laser infrarosse a cascata quantica, a fibra ottica e di potenza (MD.P03.011.001) (Modulo)

Autore CNR

• CINZIA DI FRANCO (Persona)
• GAETANO SCAMARCIO (Persona)

Insieme di parole chiave

• Parole chiave di "Influence of substrate pre-treatments on the growth of SixNyHz thin films by plasma enhanced chemical vapor deposition" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GAETANO SCAMARCIO (Persona)
• CINZIA DI FRANCO (Persona)

Prodotto

• Sviluppo e applicazioni di sorgenti laser infrarosse a cascata quantica, a fibra ottica e di potenza (MD.P03.011.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Surface & coatings technology (Rivista)

Insieme di parole chiave di

• Parole chiave di "Influence of substrate pre-treatments on the growth of SixNyHz thin films by plasma enhanced chemical vapor deposition" (Insieme di parole chiave)