Numerical simulations of an energy-transport model for partially quantized particles (Articolo in rivista)

Type
Label
  • Numerical simulations of an energy-transport model for partially quantized particles (Articolo in rivista) (literal)
Anno
  • 2014-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4310/CMS.2014.v12.n1.a5 (literal)
Alternative label
  • Pietra P.; Vauchelet N. (2014)
    Numerical simulations of an energy-transport model for partially quantized particles
    in Communications in mathematical sciences
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Pietra P.; Vauchelet N. (literal)
Pagina inizio
  • 99 (literal)
Pagina fine
  • 123 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://intlpress.com/site/pub/pages/journals/items/cms/content/vols/0012/0001/a005/index.html (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 12 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto di Matematica Applicata e Tecnologie Informatiche Enrico Magenes, CNR, Via Ferrata 1, 27100 Pavia, Italy; UPMC Univ Paris 06, UMR 7598, Laboratoire Jacques-Louis Lions, F-75005, Paris, France CNRS, UMR 7598, Laboratoire Jacques-Louis Lions, F-75005, Paris, France (literal)
Titolo
  • Numerical simulations of an energy-transport model for partially quantized particles (literal)
Abstract
  • A coupled quantum-classical model describing the transport of electrons confined in nanoscale semiconductor devices is considered. Using the subband decomposition approach allows us to separate the transport directions from the confinement direction. The motion of the gas in the transport direction is assumed to be classical. Then a hierarchy of adiabatic quantum-classical models is obtained, leading to subband SHE and energy-transport models with explicit expression of the diffusion coefficients. The energy-transport-Schrödinger-Poisson model is then used for the numerical simulation of the transport of the electron gas in an ultra-scaled Double-Gate-MOSFET. (literal)
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