Nano-patterning of GST thin films by self-assembled di-block copolymers lithography (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Nano-patterning of GST thin films by self-assembled di-block copolymers lithography (Contributo in atti di convegno) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Alternative label

• La Fata, P (La Fata, Pietro)[ 1 ] ; Puglisi, RA (Puglisi, Rosaria A.)[ 1 ] ; Lombardo, S (Lombardo, Salvatore)[ 1 ] ; Privitera, S (Privitera, Stefania); Grimaldi, MG (Grimaldi, Maria Grazia); Rimini, E (Rimini, Emanuele)[ 1 ] (2007)
  Nano-patterning of GST thin films by self-assembled di-block copolymers lithography
  in Symposium on Materials and Processes for Nonvolatile Memories II held at the 2007 MRS Spring Meeting, San Francisco, CA, APR 10-13, 2007
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• La Fata, P (La Fata, Pietro)[ 1 ] ; Puglisi, RA (Puglisi, Rosaria A.)[ 1 ] ; Lombardo, S (Lombardo, Salvatore)[ 1 ] ; Privitera, S (Privitera, Stefania); Grimaldi, MG (Grimaldi, Maria Grazia); Rimini, E (Rimini, Emanuele)[ 1 ] (literal)

Pagina inizio

• 323 (literal)

Pagina fine

• 329 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 997 (literal)

Rivista

• Materials Research Society symposia proceedings (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Catania, Italy (literal)

Titolo

• Nano-patterning of GST thin films by self-assembled di-block copolymers lithography (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 978-1-55899-957-2 (literal)

Abstract

• Chalcogenide-based Phase Change Random Access Memories (PCRAM) are promising candidates for next generation non-volatile memory devices. GeSbTe (GST) alloys may ensure non-volatility, endurance, multiple bit operation, and very fast switching speed of the cells. But if from one side, it has been shown that PCRAM performance improves with the scaling of the cell, on the other hand, endurance seems to worse with scaling. In this scenario a detailed understanding of the structural and electrical properties of the material is crucial, particularly at the nanoscale level. Moreover, it would be desirable to have simplified structures, which allow access to the bits without the need of complete complex front-end and back-end processes in order to test at the nanoscale level with large statistics. To this end we propose a technique based on di-block copolymers lithography to produce dense arrays of amorphous islands of a few nanometers (10-20 nm) embedded in crystalline GST, in order to test the electrical properties of many bits in parallel with a sensitivity at the level of a few PCRAM cells. In this paper the technique to fabricate the nano-patterned GST films is detailed and the electrical behaviour of the nano-patterned GST is presented for different amorphization conditions, and compared to the planar case results. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ROSARIA ANNA PUGLISI (Persona)
• STEFANIA MARIA SERENA PRIVITERA (Persona)
• SALVATORE LOMBARDO (Persona)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• ROSARIA ANNA PUGLISI (Persona)
• SALVATORE LOMBARDO (Persona)
• STEFANIA MARIA SERENA PRIVITERA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials Research Society symposia proceedings (Rivista)