Defect Characterization in Fully Encapsulated CdZnTe (Articolo in rivista)

Type
Label
  • Defect Characterization in Fully Encapsulated CdZnTe (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/TNS.2013.2270361 (literal)
Alternative label
  • A. Cavallini, B. Fraboni, A. Castaldini, L. Marchini, N. Zambelli, G. Benassi, and A. Zappettini (2013)
    Defect Characterization in Fully Encapsulated CdZnTe
    in IEEE transactions on nuclear science; IEE The Institution of Electrical Engineers, London (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Cavallini, B. Fraboni, A. Castaldini, L. Marchini, N. Zambelli, G. Benassi, and A. Zappettini (literal)
Pagina inizio
  • 2870 (literal)
Pagina fine
  • 2874 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6567986 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 60 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1) Univ Bologna, Dept Phys & Astron, I-40127 Bologna, Italy; 2) CNR IMEM, I-43100 Parma, Italy (literal)
Titolo
  • Defect Characterization in Fully Encapsulated CdZnTe (literal)
Abstract
  • Fully-encapsulated CZT crystals were grown by vertical Bridgman technique using boron oxide as encapsulant for preventing material decomposition. To detect possible effects of boron on the crystal microstructure, we performed current-voltage measurements and Photo-Induced Current Transient Spectroscopy measurements on samples grown by boron oxide encapsulated vertical Bridgman (set EVB) and standard vertical Bridgman (set VB). In both sets, the well-known A-center and a midgap trap dominate the PICTS spectra. However, significant differences are evident, related to the different defect contents. Our findings indicate that most of the boron atoms are electrically inactive and do not affect the transport properties of the material, confirming that boron oxide vertical Bridgman technique can be adopted for the growth of detector grade CZT crystals. (literal)
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