Photoluminescence quenching processes by NO2 adsorption in ZnO nanostructured films (Articolo in rivista)

Type
Label
  • Photoluminescence quenching processes by NO2 adsorption in ZnO nanostructured films (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3700251 (literal)
Alternative label
  • A. Creti, D. Valerini, A. Taurino, F. Quaranta, M. Lomascolo, R.Rella (2012)
    Photoluminescence quenching processes by NO2 adsorption in ZnO nanostructured films
    in Journal of applied physics; AMER INST PHYSICS, CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • A. Creti, D. Valerini, A. Taurino, F. Quaranta, M. Lomascolo, R.Rella (literal)
Pagina inizio
  • 073520 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://dx.doi.org/10.1063/1.3700251 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 111 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto per la Microelettronica e i Micrositemi IMM-CNR UOS Lecce, I-73100 Lecce, Italy ENEA, UTTMATB, Brindisi Res Ctr, I-72100 Brindisi, Italy (literal)
Titolo
  • Photoluminescence quenching processes by NO2 adsorption in ZnO nanostructured films (literal)
Abstract
  • The optical response by NO2 gas adsorption at different concentrations has been investigated, at room temperature, in ZnO nanostructured films grown by controlled vapor phase deposition. The variation (quenching) in the photoluminescence signal from excitonic and defects bands, due to the interactions between the oxidizing gas molecules and the sample surface, has been detected and dynamic responses and calibration curves as a function of gas concentration have been obtained and analyzed for each band. We showed that the sensing response results larger in excitonic band than in defect one and that the emission signal rises from two different quenchable and unquenchable states. A simple model was proposed in order to explain the quenching processes on the emission intensity and to correlate them to the morphological features of the samples. Finally, the reversibility of the quenching effects has also been tested at high gas concentration. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700251] (literal)
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