Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.7567/APEX.6.042404 (literal)

Alternative label

• Sanson A, Napolitani E, Giarola M, Impellizzeri G, Privitera V, Mariotto G,, Carnera A (2013)
  Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy
  in Applied physics express
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Sanson A, Napolitani E, Giarola M, Impellizzeri G, Privitera V, Mariotto G,, Carnera A (literal)

Pagina inizio

• 042404 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 6 (literal)

Rivista

• Applied physics express (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Univ Padua, Dipartimento Fis & Astron, I-35131 Padua, Italy [ 2 ] Univ Padua, CNR IMM MATIS, Dipartimento Fis & Astron, I-35131 Padua, Italy [ 3 ] Univ Verona, Dipartimento Informat, I-37134 Verona, Italy [ 4 ] Univ Catania, CNR IMM MATIS, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

• Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy (literal)

Abstract

• Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at similar to 370 cm(-1) related to substitutional Al atoms. Furthermore, a clear relationship between the Ge-Ge Raman peak at similar to 300 cm(-1) and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali nanostrutturati per l'elettronica, l'energia e l'ambiente (MD.P05.026.001) (Modulo)

Autore CNR

• GIULIANA IMPELLIZZERI (Unità di personale interno)
• ENRICO NAPOLITANI (Persona)
• VITTORIO PRIVITERA (Persona)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)
• ENRICO NAPOLITANI (Persona)
• GIULIANA IMPELLIZZERI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali nanostrutturati per l'elettronica, l'energia e l'ambiente (MD.P05.026.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics express (Rivista)