http://www.cnr.it/ontology/cnr/individuo/prodotto/ID274086
Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible (Articolo in rivista)
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- Label
- Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1038/srep02698 (literal)
- Alternative label
Attaccalite, Claudio and Wirtz, Ludger and Marini, Andrea and Rubio, Angel (2013)
Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible
in Scientific reports (Nature Publishing Group)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Attaccalite, Claudio and Wirtz, Ludger and Marini, Andrea and Rubio, Angel (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Rubio, A (Reprint Author), Univ Pais Vasco UPV EHU, Ctr Fis Mat CSIC UPV, EHU MPC & DIPC, Nanobio Spect Grp, Av Tolosa 72, E-20018 San Sebastian, Spain. Attaccalite, Claudio, CNRS, Inst Neel, F-38042 Grenoble 9, France. Wirtz, Ludger, CNRS UMR 8520, Inst Elect Microelect & Nanotechnol, Dept ISEN, F-59652 Villeneuve Dascq, France. Wirtz, Ludger, Univ Luxembourg, Phys & Mat Sci Res Unit, L-1511 Luxembourg, Luxembourg. Marini, Andrea, CNR, Ist Struttura Mat, I-00016 Monterotondo Staz, Italy. Rubio, Angel, Univ Pais Vasco UPV EHU, Ctr Fis Mat CSIC UPV, EHU MPC & DIPC, Nanobio Spect Grp, E-20018 San Sebastian, Spain. Rubio, Angel, Univ Pais Vasco UPV EHU, Ctr Fis Mat CSIC UPV, EHU MPC & DIPC, ETSF Sci Dev Ctr,Dept Fis Mat, E-20018 San Sebastian, Spain. Rubio, Angel, Fritz Haber Inst Max Planck Gesell, D-14195 Berlin, Germany. (literal)
- Titolo
- Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible (literal)
- Abstract
- Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate graphene as well as for its intrinsic UV lasing response. Similar to carbon, one-dimensional boron nitride nanotubes (BNNTs) have been theoretically predicted and later synthesised. Here we use first principles simulations to unambiguously demonstrate that i) BN nanotubes inherit the highly efficient UV luminescence of hexagonal BN; ii) the application of an external perpendicular field closes the electronic gap keeping the UV lasing with lower yield; iii) defects in BNNTS are responsible for tunable light emission from the UV to the visible controlled by a transverse electric field (TEF). Our present findings pave the road towards optoelectronic applications of BN-nanotube-based devices that are simple to implement because they do not require any special doping or complex growth. (literal)
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