Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/MSF.679-680.808 (literal)

Alternative label

• Roccaforte, F. and Greco, G. and Weng, M.H. and Giannazzo, F. and Raineri, V. (2011)
  Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Roccaforte, F. and Greco, G. and Weng, M.H. and Giannazzo, F. and Raineri, V. (literal)

Pagina inizio

• 808 (literal)

Pagina fine

• 811 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• cited By (since 1996)0; Conference of org.apache.xalan.xsltc.dom.DOMAdapter@6eac823f ; Conference Date: org.apache.xalan.xsltc.dom.DOMAdapter@7f9b2edc Through org.apache.xalan.xsltc.dom.DOMAdapter@2521aef7; Conference Code:84545 (literal)

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• http://www.scopus.com/inward/record.url?eid=2-s2.0-79955115987&partnerID=40&md5=34da357f66afe20270467ab191ccd9ab (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 679-680 (literal)

Rivista

• Materials science forum (Rivista)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Consiglio Nazionale Delle Ricerche, Istituto Per la Microelettronica e Microsistemi, Strada VIII n.5, Zona Industriale, 95121, Catania, Italy (literal)

Titolo

• Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers (literal)

Abstract

• In this work the electrical and structural properties of AlGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers were investigated. A morphological and structural analysis of the samples showed the presence of \"V-shaped\" near-surface defects in the AlGaN layer, with a preferential orientation along the miscut direction [11-20]. In the presence of these defects an anisotropy of the current-voltage characteristics of high electron mobility transistors (HEMTs), fabricated with two different orientations, was observed. The sheet carrier density n s and the channel mobility ? n were determined from the device characteristics. The results were discussed considering the possible implications for AlGaN/GaN HEMT technology. (c) (2011) Trans Tech Publications. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• FABRIZIO ROCCAFORTE (Persona)
• MING HUNG WENG (Unità di personale esterno)
• GIUSEPPE GRECO (Unità di personale esterno)

Insieme di parole chiave

• Keywords of "Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• MING HUNG WENG (Unità di personale esterno)
• GIUSEPPE GRECO (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)

Insieme di parole chiave di

• Keywords of "Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers" (Insieme di parole chiave)