Model dielectric function analysis of the critical point features of silicon nanocrystal films in a broad parameter range (Articolo in rivista)

Type
Label
  • Model dielectric function analysis of the critical point features of silicon nanocrystal films in a broad parameter range (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2012.10.126 (literal)
Alternative label
  • Agocs E, Nassiopoulou AG, Milita S, Petrik P (2013)
    Model dielectric function analysis of the critical point features of silicon nanocrystal films in a broad parameter range
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Agocs E, Nassiopoulou AG, Milita S, Petrik P (literal)
Pagina inizio
  • 83 (literal)
Pagina fine
  • 86 (literal)
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  • 541 (literal)
Rivista
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  • 4 (literal)
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  • SI (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Pannonia, Fac Informat Technol, Doctoral Sch Mol & Nanotechnol, H-8200 Veszprem, Hungary [ 2 ] Res Ctr Nat Sci, Res Inst Tech Phys & Mat Sci MFA, H-1525 Budapest, Hungary [ 3 ] IMEL NCSR Demokritos, Athens 15310, Greece [ 4 ] CNR IMM Sez Bologna, I-40129 Bologna, Italy (literal)
Titolo
  • Model dielectric function analysis of the critical point features of silicon nanocrystal films in a broad parameter range (literal)
Abstract
  • Due to quantum-confinement the band structure of silicon nanocrystals (NCs) is different from that of bulk silicon and strongly depends on the NC size. The samples we investigated have been prepared using chemical vapor deposition and annealing allowing a good control of the parameters in terms of both thickness and NC size, being suitable as model systems. The problem of the analysis is that the critical point features of the dielectric function can only be described with acceptable accuracy when using numerous parameters. The majority of the fit parameters are describing the oscillators of different line-shapes. In this work we show how the number of fit parameters can be reduced by a systematic analysis to find non-sensitive and correlating parameters to fix and couple as much parameters as possible. (literal)
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