Hydrogenated amorphous silicon multi-SOI waveguide modulator with low voltage-length product (Articolo in rivista)

Type
Label
  • Hydrogenated amorphous silicon multi-SOI waveguide modulator with low voltage-length product (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.optlastec.2012.07.003 (literal)
Alternative label
  • S. Rao, G. Coppola, M. A. Gioffrè, F. G. Della Corte (2013)
    Hydrogenated amorphous silicon multi-SOI waveguide modulator with low voltage-length product
    in Optics and Laser Technology; Elsevier Ltd, Oxford (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • S. Rao, G. Coppola, M. A. Gioffrè, F. G. Della Corte (literal)
Pagina inizio
  • 204 (literal)
Pagina fine
  • 208 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 45 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Università degli Studi \"Mediterranea\" di Reggio Calabria, Department of Information Science, Mathematics, Electronics and Transportations (DIMET), Via Graziella Loc. Feo di Vito, 89133 Reggio Calabria, Italy Institute for Microelectronics and Microsystems--Consiglio Nazionale delle Ricerche (IMM-CNR)--Unit of Napoli, Via Castellino, 111, 80132 Napoli, Italy (literal)
Titolo
  • Hydrogenated amorphous silicon multi-SOI waveguide modulator with low voltage-length product (literal)
Abstract
  • Electrically induced phase modulation is characterized for the first time in a waveguide-integrated Fabry-Perot resonating cavity based both on an index- and conductivity- high-contrast amorphous silicon/amorphous silicon carbide (a-Si:H/a-SiC:H) multistack. The device consists of a single mode a-Si:H rib waveguide containing three insulating thin layers of a-SiC:H embedded within the core thickness. The effective refractive index change, Dneff, at the wavelength of l1/41.55 mm is achieved through the application of an electric field across the stack which induces carrier accumulation at all the a-Si:H/a-SiC:H interfaces, resulting in turn in a high interaction between the optical beam and the accumulation layers. This configuration allows to obtain a Vp ? Lp product of about 5.9 V cm, not far from what observed in high performing electro-optical modulators in crystalline silicon. (literal)
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