Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices (Contributo in atti di convegno)

Type
Label
  • Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Lombardo S, Gerardi C, Breuil L, Jahan C, Perniola L, Cina G, Corso D, Tripiciano E, Ancarani V, Iannaccone G, Iacono G, Bongiorno C, Garozzo C, Barbera P, Nowak E, Puglisi R, Costa G, Coccorese C, Vecchio M, Rimini E, Van Houdt J, De Salvo B, Melanotte M (2007)
    Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices
    in International Electron Devices Meeting, 2007. IEDM '07
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lombardo S, Gerardi C, Breuil L, Jahan C, Perniola L, Cina G, Corso D, Tripiciano E, Ancarani V, Iannaccone G, Iacono G, Bongiorno C, Garozzo C, Barbera P, Nowak E, Puglisi R, Costa G, Coccorese C, Vecchio M, Rimini E, Van Houdt J, De Salvo B, Melanotte M (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, STM, CEA-LETI, IMEC, University of Pisa (literal)
Titolo
  • Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices (literal)
Abstract
  • Double-gate and tri-gate FinFET type memories with nitride (SONOS-like) or Si nanocrystals storage with minimum feature sizes of 10 nm were realized. Strong performance advantages in program / erase characteristics and reliability deeply linked to the FinFET architecture are demonstrated (literal)
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